深圳市广辉电子有限公司

BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products
have been designed to minimize on-state resistance
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for
low voltage, low current applications such as small
servo motor control, power MOSFET gate drivers, and
other switching applications.
Features
• 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
RDS(ON) = 6.0Ω @ VGS = 4.5 V
• High density cell design for extremely low RDS(ON)
• Rugged and Reliable
• Compact industry standard SOT-23 surface mount
package

自动翻译：

　BSS138
　　N-Channel逻辑水平的提高模式场效应晶体管
　　总体描述
　　这些N-Channel增强模式磁场效应
　　晶体管是使用了费雅嘉专有的,
　　细胞密度、DMOS高技术。这些产品
　　被设计用来减少导通状态的抵抗
　　在提供坚固耐用,可靠,快速切换
　　性能。这些产品特别适合
　　低电压、低电流的应用,如小
　　伺服电机驱动控制、功率MOSFET门,