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BSS84
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize onstate
resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
0.13A DC and can deliver current up to 0.52A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
• −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V
• Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON)
• High saturation current
P-Channel Enhancement Mode Field Effect Transistor
General Description
These P-Channel enhancement mode field effect
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize onstate
resistance, provide rugged and reliable
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
0.13A DC and can deliver current up to 0.52A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
Features
• −0.13A, −50V. RDS(ON) = 10Ω @ VGS = −5 V
• Voltage controlled p-channel small signal switch
• High density cell design for low RDS(ON)
• High saturation current