深圳市广辉电子有限公司

75A, 600V, UFS Series N-Channel IGBT
The HGTG40N60C3 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25
o
C and 150
o
C.
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays and
contactors.
Formerly developmental type TA49273.

Features
• 75A, 600V, T
C
= 25
o
C
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at T
J
= 150
o
C
• Short Circuit Rating
• Low Conduction Loss